Trapping vs. permanent degradation in GaN high electron mobility transistors
نویسندگان
چکیده
There is great interest in improving the electrical reliability of GaN high electron mobility transistors (HEMT). For this, the degradation mechanisms must be identified. Under high voltage stress the drain current is seen to degrade in a partially recoverable manner. This is attributed to the introduction of carrier trapping, but it also reveals the presence of additional permanent degradation [1]. Several studies have focused on the role of trapping in device degradation [2-5] but little effort has been given to identifying permanent degradation. This is particularly hard because of the relatively slow nature of trapping in electrically degraded GaN HEMTs [1]. In this work, we separate trapping-related from permanent degradation and establish how these two different degradation mechanisms contribute to the overall degradation of GaN HEMTs.
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